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STTH1302CT/CG/CFP
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2 x 6.5 A 200 V 175 C 0.95 V 25 ns
A1 K A2
K
FEATURES AND BENEFITS Suited for SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF
s s s s s s
K A1
A2
K
TO-220AB STTH1302CT
A2 A1
D2PAK STTH1302CG
A2 K A1
DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB / D PAK TO-220FPAB IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature
2
TO-220FPAB STTH1302CFP
Parameter Repetitive peak reverse voltage Tc = 155C Tc = 145C Tc = 135C Tc = 110C Per diode Per device Per diode Per device
Value 200 20 6.5 13 6.5 13 70 - 65 to + 175 175
Unit V A A A A C C
tp = 10 ms sinusoidal
August 2002 - Ed: 1A
1/7
STTH1302CT/CG/CFP
THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK TO-220FPAB TO-220AB / D PAK TO-220FPAB Rth (c) Coupling TO-220AB / D PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * V F* Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 380 s, < 2%
2 2 2
Value Per diode Total 3 5.5 1.9 4.5 0.8 3.5
Unit C/W C/W C/W
Min.
Typ. 3
Max. 6 60 1.1
Unit A V
VR = VRRM IF = 6.5 A IF = 6.5 A IF = 13 A IF = 13 A 0.95 0.81
0.95 1.25 1.1
To evaluate the conduction losses use the following equation : P = 0.80 x IF(AV) + 0.023 x IF2(RMS)
DYNAMIC CHARACTERISTICS (per diode) Symbol trr Parameter Reverse recovery time Test Conditions Tj = 25C IF = 0.5 A Irr = 0.25 A IR = 1 A IF = 6.5 A dIF/dt = 100 A/s VFR = 1.1 x VF max IF = 6.5 A dIF/dt = 100 A/s Min. Typ. 16 Max. 25 Unit ns
tfr
Forward recovery time
Tj = 25C
70
ns
VFP
Forward recovery voltage
Tj = 25C
2.2
V
2/7
STTH1302CT/CG/CFP
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(AV)(W)
8
= 0.1 = 0.2 = 0.5
Fig. 2: Peak current versus factor (per diode).
IM(A)
60
IM T
7 6 5 4 3
= 0.05 =1
50
=tp/T
40
tp
30
P=10W P=5W P=2W
20
2 1 0 0 1 2 3 4 5 6
T
IF(AV)(A)
10
=tp/T
7
tp
8
0 0.0 0.1 0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Forward voltage drop versus forward current (per diode).
IFM(A)
100.0
Tj=125C Typical values
Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / D2PAK).
Zth(j-c) / Rth(j-c)
1.0
= 0.5
10.0
Tj=125C Maximum values
= 0.2
Tj=25C Maximum values
= 0.1
1.0
Single pulse
T
VFM(V)
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.1 1.E-03 1.E-02
tp(s)
1.E-01
=tp/T
tp
1.E+00
Fig. 4-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB).
Zth(j-c) / Rth(j-c)
1.0
Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB / D2PAK).
IM(A)
100 90 80
= 0.5 = 0.2 = 0.1
70 60 50 40
TC=125C TC=25C
TC=75C
30
Single pulse
T
20
IM t
tp(s)
0.1 1.E-02 1.E-01 1.E+00
=tp/T
tp
10 0 1.E-03
=0.5
t(s)
1.E-02 1.E-01 1.E+00
1.E+01
3/7
STTH1302CT/CG/CFP
Fig. 5-2: Non repetitive surge peak forward current versus overload duration per diode (TO-220FPAB).
IM(A)
70 60 50 40 30
TC=125C TC=25C
Fig. 6: Average forward current versus ambient temperature (=0.5, per diode).
IF(AV)(A)
8 7 6 5 4 3 2
DPAK (S=1cm) Rth(j-a)=50C/W TO-220FPAB Rth(j-a)=Rth(j-c) TO-220AB/DPAK
TC=75C
20 10 0 1.E-03
IM
1
t
=0.5
t(s)
0
Tamb(C)
1.E-01 1.E+00
0 25 50 75 100 125 150 175
1.E-02
Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF)
100
F=1MHz VOSC=30VRMS Tj=25C
Fig. 8: Reverse recovery charges versus dIF/dt (90% confidence, per diode).
QRR(nC)
240 220 200 180 160 140 120 100 80
Tj=25C Tj=125C IF=6.5A VR=200V
60 40
VR(V)
10 1 10 100 1000
20 0 10
dIF/dt(A/s)
100 1000
Fig. 9: Reverse recovery time versus dIF/dt (90% confidence, per diode).
trr(ns)
80 70 60 50 40 30 20
Tj=25C Tj=125C IF=6.5A VR=100V
Fig. 10: Reverse recovery current versus dIF/dt (90% confidence, per diode).
IRM(A)
12
IF=6.5A VR=100V
10
Tj=125C
8
6
4
Tj=25C
2
10
dIF/dt(A/s)
0 10 100 1000
0 10
dIF/dt(A/s)
100 1000
4/7
STTH1302CT/CG/CFP
Fig. 11: Dynamic parameters versus junction temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125C]
1.4
IF=6.5A VR=100V
Fig. 12: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35m)(D2PAK).
Rth(j-a)(C/W)
80 70
1.2 1.0 0.8
IRM
60 50 40
0.6 0.4 0.2
QRR
30 20 10
Tj(C)
0.0 0 25 50 75 100 125 150
S(cm)
0 2 4 6 8 10 12 14 16 18 20
0
PACKAGE MECHANICAL DATA TO-220AB REF. Min. A
H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A
DIMENSIONS Millimeters Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154
C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M
16.4 typ.
0.645 typ.
2.6 typ.
0.102 typ.
5/7
STTH1302CT/CG/CFP
PACKAGE MECHANICAL DATA D2PAK REF.
A E L2 C2
DIMENSIONS Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126
A A1 A2
D
4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40
L L3 A1 B2 B G A2 C R
B B2 C C2 D E G L L2 L3 M R
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
0.40 typ.
0.016 typ.
FOOTPRINT
16.90
10.30 1.30
5.08
3.70 8.90
6/7
STTH1302CT/CG/CFP
PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 2.4 5.20 2.7 0.195 0.094 0.205 0.106
A H B
Dia L6 L2 L3 L5 D F1 L4 F2 L7
A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia.
F G1 G
E
10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 9.00 3.00 16.4 9.30 3.20
0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.354 0.118 0.646 0.366 0.126
Ordering type STTH1302CT STTH1302CFP STTH1302CG STTH1302CG-TR
s
Marking STTH1302CT STTH1302CFP STTH1302CG STTH1302CG
Package TO-220AB TO-220FPAB D PAK D PAK
2 2
Weight 2.20 g 2.0 g 1.48 g 1.48 g
Base qty 50 50 50 1000
Delivery mode Tube Tube Tube Tape & reel
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7


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